Roberto Jakomin
Instituição:
Universidade Federal do Rio de Janeiro
Centro:
Campus de Xerém
Unidade:
Setor de Pessoal/Xerém
Departamento:
Docentes/Xerém
Formação:
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Pontifícia Universidade Católica do Rio de Janeiro
| Pós-Doutorado | 2011 - Agora
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Laboratoire de Photonique et de Nanostructures - CNRS
| Pós-Doutorado | 2008 - 2011
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Universita' degli Studi di Parma
Scienza e Tecnologia dei materiali innovativi | Doutorado | 2005 - 2008
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Universita' degli Studi di Parma
Scienza dei Materiali | Mestrado | 2003 - 2004
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Universita' degli Studi di Parma
Scienza dei Materiali | Graduação | 1998 - 2003
Laboratórios:
Nenhum laboratório cadastrado
Nuvens de Palavras:
Artigos:
(100.00% artigos com DOI)
| Titulo | DOI | Ano |
|---|---|---|
| Cu-Doped Sb2Se3 Thin-Film Solar Cells Based on Hybrid Pulsed Electron Deposition/Radio Frequency Magnetron Sputtering Growth Techniques | 10.3390/solar4010004 | 2024 |
| Panning ideal In(Ga)As(P)/InGaP quantum dot structures for intermediate band solar cells | 10.1088/1361-6463/ad0d2f | 2023 |
| Advances on Sb2Se3 Solar Cells Fabricated by Physical Vapor Deposition Techniques | 10.3390/solar3040031 | 2023 |
| III-V SOLAR CELLS | 10.29292/jics.v17i2.618 | 2022 |
| The Role of Defects on the Performance of Quantum Dot Intermediate Band Solar Cells | 10.1109/JPHOTOV.2021.3070433 | 2021 |
| Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga In P | 10.1063/1.5063941 | 2019 |
| Progress in Symmetric and Asymmetric Superlattice Quantum Well Infrared Photodetectors | 10.1002/andp.201800462 | 2019 |
| Effect of capping procedure on quantum dot morphology: Implications on optical properties and efficiency of InAs/GaAs quantum dot solar cells | 10.1016/j.solmat.2018.01.028 | 2018 |
| Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots | 10.1088/1361-6641/aa6471 | 2017 |
| Detecting Infrared Radiation beyond the Bandoffset with Intersubband Transitions | 10.1109/LPT.2016.2554064 | 2016 |
| Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation | 10.1063/1.4958871 | 2016 |
| Early nucleation stages of low density InAs quantum dots nucleation on GaAs by MOVPE | 10.1016/j.jcrysgro.2015.10.031 | 2015 |
| Strain Relaxation in InAs Quantum Dots and its Suppression by Indium Flushing | 10.1017/S1431927615005711 | 2015 |
| InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells | 10.1063/1.4894295 | 2014 |
| Electrical and interfacial properties of GaAs/GaSb metal-organic vapour phase epitaxy heterostructures | 10.1063/1.4789603 | 2013 |
| (Invited) Strain Engineering for Optical Gain in Germanium | 10.1149/05009.0363ecst | 2013 |
| Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers | 10.1063/1.4804266 | 2013 |
| Control of tensile strain in germanium waveguides through silicon nitride layers | 10.1063/1.4718525 | 2012 |
| On the electrical properties of Si-doped InGaP layers grown by low pressure¿metalorganic vapor phase epitaxy | 10.1016/j.tsf.2012.07.009 | 2012 |
| High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition | 10.1063/1.3559231 | 2011 |
| p and n-type germanium layers grown using iso-butyl germane in a III-V metal-organic vapor phase epitaxy reactor | 10.1016/j.tsf.2011.02.019 | 2011 |
| Optical gain in single tensile-strained germanium photonic wire | 10.1364/OE.19.017925 | 2011 |
| Direct and indirect band gap room temperature electroluminescence of Ge diodes | 10.1063/1.3462400 | 2010 |
| Growth and characterization of manganese-doped InAsP | 10.1016/j.jcrysgro.2008.08.020 | 2008 |
| Deep levels controlling the electrical properties of Fe-implanted GaInP?GaAs | 10.1063/1.2734477 | 2007 |
| Electrical and structural characterization of Fe implanted GaInP | 10.1016/j.physb.2007.08.166 | 2007 |
| AC Losses in First and Second Generation High<tex>$rm T_rm c$</tex>Tapes and<tex>$rm MgB_2$</tex>Tapes | 10.1109/TASC.2005.848245 | 2005 |
Eventos:
(31.03% eventos com DOI)
| Titulo | DOI | Ano |
|---|---|---|
| Preparation and characterization of PVC-PMMA polymer blends as flexible bases for III-V photovoltaics | 10.1109/SBMicro60499.2023.10302464 | 2023 |
| Transition Energy Calculations of Type II In(As)P/InGaP Quantum Dots for Intermediate Band Solar Cells | 10.1109/sbmicro.2019.8919441 | 2019 |
| DESENVOLVIMENTO DE CÉLULAS SOLARES DE BANDA INTERMEDIÁRIA NO LABORATÓRIO DE SEMICONDUTORES DA PUC-RIO | 2018 | |
| From InAs extended monolayer flat 2D terraces to 3Dislands grown on GaAs substrates | 2015 | |
| InAs quantum dots on (Al)GaAs for intermediate band solar cells | 2015 | |
| Observation of the initial stages of InAs quantum dot formation on GaAs | 2015 | |
| InAs quantum dot formation on GaAs for optimization of intermediate band solar cells | 2015 | |
| Study on the growth parameters of InAs quantum dots on (Al)GaAs for intermediate band solar cells' | 2015 | |
| Study on the growth parameters of InAs quantum dots on (Al)GaAs for intermediate band solar cells | 2015 | |
| Reflectance anisotropy spectroscopy oscillations on GaAs:C/GaAs:Si tunnel diodes grown by MOVPE. | 2014 | |
| Growth and characterization of InAs quantum dots grown on (Al)GaAs for Intermediate Band Solar Cells | 2014 | |
| In-situ monitored growth of InGaAs and InAlAs on InP by reflectance anisotropy spectroscopy | 2014 | |
| Superlattice quantum well infrared photodetectors for detection of radiation energies above 400 meV | 2014 | |
| InAs quantum dot growth on AlGaAs by MOVPE for intermediate band solar cells | 2014 | |
| InGaAs/InAlAs quantum well infrared photodetectors for operation in the 1.7 to 3.1 µm wavelength range | 10.1109/sbmicro.2014.6940111 | 2014 |
| Polarization dependent photocurrent of InAs/AlGaAs quantum dot intermediate-band solar cells | 2013 | |
| Quantum dot optimization for Intermediate Band Solar Cells | 2013 | |
| Optimization of InAs quantum dots on GaAlAs for solar cells | 2013 | |
| A proposal for Intermediate Band Solar Cells with optimized transition energy - InAs QD / AlGaAs | 10.1109/SBMicro.2013.6676138 | 2013 |
| Quantum well infrared photodetector based on an intersubband transition between the ground and a continuum localized state | 2012 | |
| Stimulated emission in single tensile-strained Ge photonic wire | 10.1109/GROUP4.2011.6053769 | 2011 |
| Mechanical Tensile Strain Engineering of Ge for Gain Achievement | 10.1109/GROUP4.2010.5643431 | 2010 |
| Germanium Junctions Entirely Grown by MOVPE for Solar Cell Applications | 2010 | |
| First results on the apollon project multi-approach for high efficiency integrated and intelligent concentrating PV modules (systems) | 10.1109/PVSC.2009.5411295 | 2009 |
| Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser | 10.1109/GROUP4.2009.5338363 | 2009 |
| n and p-doped Germanium grown by MOVPE for solar cell applications | 2009 | |
| MOVPE Growth of n- and p-Doped Germanium for Solar Cell Applications | 10.4229/24thEUPVSEC2009-1DV.5.3 | 2009 |
| Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE with TBAs and TBP | 2008 | |
| Tailoring the depth of the Mn acceptor in InAsP | 2008 |