Roberto Jakomin
Instituição:
Universidade Federal do Rio de Janeiro
Centro:
Campus de Xerém
Unidade:
Setor de Pessoal/Xerém
Departamento:
Docentes/Xerém
Formação:
-
Pontifícia Universidade Católica do Rio de Janeiro
| Pós-Doutorado | 2011 -
-
Laboratoire de Photonique et de Nanostructures - CNRS
| Pós-Doutorado | 2008 - 2011
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Universita' degli Studi di Parma
Scienza e Tecnologia dei materiali innovativi | Doutorado | 2005 - 2008
-
Universita' degli Studi di Parma
Scienza dei Materiali | Mestrado | 2003 - 2004
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Universita' degli Studi di Parma
Scienza dei Materiali | Graduação | 1998 - 2003
Laboratórios:
Nenhum laboratório cadastrado
Nuvens de Palavras:
Artigos:
Nenhum artigo cadastrado
Eventos:
(31.03% eventos com DOI)
| Titulo | DOI | Ano |
|---|---|---|
| Preparation and characterization of PVC-PMMA polymer blends as flexible bases for III-V photovoltaics | 10.1109/SBMicro60499.2023.10302464 | 2023 |
| Transition Energy Calculations of Type II In(As)P/InGaP Quantum Dots for Intermediate Band Solar Cells | 10.1109/sbmicro.2019.8919441 | 2019 |
| DESENVOLVIMENTO DE CÉLULAS SOLARES DE BANDA INTERMEDIÁRIA NO LABORATÓRIO DE SEMICONDUTORES DA PUC-RIO | 2018 | |
| From InAs extended monolayer flat 2D terraces to 3Dislands grown on GaAs substrates | 2015 | |
| InAs quantum dots on (Al)GaAs for intermediate band solar cells | 2015 | |
| Observation of the initial stages of InAs quantum dot formation on GaAs | 2015 | |
| InAs quantum dot formation on GaAs for optimization of intermediate band solar cells | 2015 | |
| Study on the growth parameters of InAs quantum dots on (Al)GaAs for intermediate band solar cells' | 2015 | |
| Study on the growth parameters of InAs quantum dots on (Al)GaAs for intermediate band solar cells | 2015 | |
| Reflectance anisotropy spectroscopy oscillations on GaAs:C/GaAs:Si tunnel diodes grown by MOVPE. | 2014 | |
| Growth and characterization of InAs quantum dots grown on (Al)GaAs for Intermediate Band Solar Cells | 2014 | |
| In-situ monitored growth of InGaAs and InAlAs on InP by reflectance anisotropy spectroscopy | 2014 | |
| Superlattice quantum well infrared photodetectors for detection of radiation energies above 400 meV | 2014 | |
| InAs quantum dot growth on AlGaAs by MOVPE for intermediate band solar cells | 2014 | |
| InGaAs/InAlAs quantum well infrared photodetectors for operation in the 1.7 to 3.1 µm wavelength range | 10.1109/sbmicro.2014.6940111 | 2014 |
| Polarization dependent photocurrent of InAs/AlGaAs quantum dot intermediate-band solar cells | 2013 | |
| Quantum dot optimization for Intermediate Band Solar Cells | 2013 | |
| Optimization of InAs quantum dots on GaAlAs for solar cells | 2013 | |
| A proposal for Intermediate Band Solar Cells with optimized transition energy - InAs QD / AlGaAs | 10.1109/SBMicro.2013.6676138 | 2013 |
| Quantum well infrared photodetector based on an intersubband transition between the ground and a continuum localized state | 2012 | |
| Stimulated emission in single tensile-strained Ge photonic wire | 10.1109/GROUP4.2011.6053769 | 2011 |
| Mechanical Tensile Strain Engineering of Ge for Gain Achievement | 10.1109/GROUP4.2010.5643431 | 2010 |
| Germanium Junctions Entirely Grown by MOVPE for Solar Cell Applications | 2010 | |
| First results on the apollon project multi-approach for high efficiency integrated and intelligent concentrating PV modules (systems) | 10.1109/PVSC.2009.5411295 | 2009 |
| Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser | 10.1109/GROUP4.2009.5338363 | 2009 |
| n and p-doped Germanium grown by MOVPE for solar cell applications | 2009 | |
| MOVPE Growth of n- and p-Doped Germanium for Solar Cell Applications | 10.4229/24thEUPVSEC2009-1DV.5.3 | 2009 |
| Electrical and optical properties of Si-doped InGaP layers grown by LP-MOVPE with TBAs and TBP | 2008 | |
| Tailoring the depth of the Mn acceptor in InAsP | 2008 |