Marcos Gonçalves de Menezes

Instituição:

Universidade Federal do Rio de Janeiro

Centro:

Centro de Ciências Matemáticas e da Natureza

Unidade:

Instituto de Física

Departamento:

Departamento de Física dos Sólidos/I Fis

ORCID:

não disponível no Lattes


Formação:
  • Universidade Federal do Rio de Janeiro

    | Pós-Doutorado | 2014 - Agora
  • Donostia International Physics Center

    | Pós-Doutorado | 2014 - 2014
  • Universidade Federal do Rio de Janeiro

    Fisica | Doutorado | 2009 - 2013
  • Universidade Federal do Rio de Janeiro

    Física | Graduação | 2005 - 2008
Laboratórios:
Nenhum laboratório cadastrado
Nuvens de Palavras:
Artigos:

(100.00% artigos com DOI)

Titulo DOI Ano
Theoretical characterization of tolanene: A new 2D sp-sp2 hybridized carbon allotrope 10.1016/j.carbon.2023.118618 2024
Franckeite-derived van der Waals heterostructure with highly efficient photocatalytic NO abatement: Theoretical insights and experimental evidences 10.1016/j.jece.2024.111998 2024
THD-C Sheet: A Novel Nonbenzenoid Carbon Allotrope with Tetra-, Hexa-, and Dodeca-Membered Rings 10.1021/acs.jpcc.4c01870 2024
Unlocking the Potential of Nanoribbon-Based Sb 2 S 3 /Sb 2 Se 3 van-der-Waals Heterostructure for Solar-Energy-Conversion and Optoelectronics Applications 10.1021/acsami.3c10868 2023
Spatially controlled graphene- MoSe 2 lateral heterostructure for sensing applications: Insights from first-principles calculations 10.1103/physrevb.105.115413 2022
Vibrational instabilities in multilayer graphene and graphite: Effects of strain and number of layers 10.1103/physrevb.106.195407 2022
Tunable and sizeable band gaps in strained SiC3/hBN vdW heterostructures: A potential replacement for graphene in future nanoelectronics 10.1016/j.commatsci.2020.110233 2021
Tunable optoelectronic properties in multilayer 1T-TiS2: the effects of strain and an external electric field 10.1007/s10853-020-05760-7 2021
Franckeite as an Exfoliable Naturally Occurring Topological Insulator 10.1021/acs.nanolett.1c02742 2021
Unveiling the multilevel structure of midgap states in Sb-doped monolayers 10.1103/PhysRevB.104.125438 2021
Atomic-scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory 10.1103/PhysRevB.104.125433 2021
Structural and magnetic properties of a defective graphene buffer layer grown on SiC(0001): a DFT study 10.1039/D0CP02167A 2020
Electronic properties of substitutional impurities in graphenelike C 2 N , t g 10.1103/physrevb.102.134112 2020
Temperature effects on the structural phase transitions of gallium phosphide 10.1016/j.commatsci.2019.02.010 2019
Electronic properties and vibrational spectra of (NH4)2M-(SO4)2·6H2O (M-=-Ni, Cu) Tutton's salt: DFT and experimental study 10.1016/j.saa.2019.04.023 2019
Layer breathing and shear modes in multilayer graphene: a DFT-vdW study 10.1088/1361-648x/ab1995 2019
Tunable optoelectronic properties in h-BP/h-BAs bilayers: The effect of an external electrical field 10.1016/j.apsusc.2019.07.030 2019
Exotic impurity-induced states in single-layer h -BN: The role of sublattice structure and intervalley interactions 10.1103/physrevb.100.085427 2019
Tight binding parametrization of few-layer black phosphorus from first-principles calculations 10.1016/j.commatsci.2017.11.039 2018
Giant and Tunable Anisotropy of Nanoscale Friction in Graphene 10.1038/srep31569 2016
Donors in Ge as qubits -Establishing physical attributes 10.1209/0295-5075/116/20002 2016
Electronic and structural properties of vacancies and hydrogen adsorbates on trilayer graphene 10.1088/0953-8984/27/33/335302 2015
Ab initio quasiparticle band structure of ABA and ABC-stacked graphene trilayers 10.1103/physrevb.89.035431 2014
Half-metallicity induced by charge injection in hexagonal boron nitride clusters embedded in graphene 10.1103/PhysRevB.86.195413 2012
Proposal for a single-molecule field-effect transistor for phonons 10.1103/PhysRevB.81.012302 2010
Comment on ¿Wave-scattering formalism for thermal conductance in thin wires with surface disorder¿ 10.1103/PhysRevB.81.117401 2010
Gap opening by asymmetric doping in graphene bilayers 10.1103/PhysRevB.82.245414 2010
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