Belita Koiller

Instituição:

Universidade Federal do Rio de Janeiro

Centro:

Centro de Ciências Matemáticas e da Natureza

Unidade:

Instituto de Física

Departamento:

Gabinete do Diretor do Instituto Física

ORCID:

não disponível no Lattes


Formação:
  • Universidade da California em Berkeleey

    | Pós-Doutorado | 1982 - 1983
  • Universidade da California em Berkeley

    Fisica | Doutorado | 1972 - 1975
  • Pontifícia Universidade Católica do Rio de Janeiro

    Fisica | Graduação | 1968 - 1971
Laboratórios:
Nenhum laboratório cadastrado
Nuvens de Palavras:
Artigos:

(90.84% artigos com DOI)

Titulo DOI Ano
Atomic-scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory 10.1103/physrevb.104.125433 2021
Theory of hole-spin qubits in strained germanium quantum dots 10.1103/PhysRevB.103.125201 2021
Lifting of spin blockade by charged impurities in Si-MOS double quantum dot devices 10.1103/PhysRevB.101.155411 2020
Stokes-anti-Stokes correlated photon properties akin to photonic Cooper pairs 10.1103/physrevb.99.100503 2019
Disordered Si:P nanostructures as switches and wires for nanodevices 10.1103/physrevb.99.205422 2019
Physical Properties of Photonic Cooper Pairs Generated via Correlated Stokes-anti-Stokes Raman Scattering 10.1002/pssb.201900218 2019
Two-dimensional semiconductors pave the way towards dopant-based quantum computing 10.3762/bjnano.9.249 2018
Adequacy of Si:P chains as Fermi-Hubbard simulators 10.1038/s41534-017-0051-1 2018
Photonic Counterparts of Cooper Pairs 10.1103/PhysRevLett.119.193603 2017
Donor wave functions in Si gauged by STM images 10.1103/physrevb.93.045303 2016
Mitigating valley-driven localization in atomically thin dopant chains in Si 10.1103/PhysRevB.94.115425 2016
Donors in Ge as qubits -Establishing physical attributes 10.1209/0295-5075/116/20002 2016
Theory of one and two donors in silicon 10.1088/0953-8984/27/15/154208 2015
Dark-state adiabatic passage with spin-one particles 10.1103/PhysRevA.90.012319 2014
An Exchange-Coupled Donor Molecule in Silicon 10.1021/nl5023942 2014
Splitting valleys in Si/SiO2: Identification and control of interface states 10.1103/PhysRevB.89.205307 2014
Genetic design of enhanced valley splitting towards a spin qubit in silicon 10.1038/ncomms3396 2013
Correlations and Werner states in finite spin linear arrays 10.1063/1.4825152 2013
Driven flow with exclusion and transport in graphenelike structures 10.1103/physreve.88.042133 2013
Valley-Based Noise-Resistant Quantum Computation Using Si Quantum Dots 10.1103/PhysRevLett.108.126804 2012
Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_{2} interface 10.1103/PhysRevB.86.035317 2012
Hyperfine interactions in silicon quantum dots 10.1103/PhysRevB.83.165301 2011
Intervalley coupling for interface-bound electrons in silicon: An effective mass study 10.1103/PhysRevB.84.155320 2011
Quantum computation with doped silicon cavities 10.1103/PhysRevB.81.085325 2010
Heterointerface effects on the charging energy of the shallow D^{?} ground state in silicon: Role of dielectric mismatch 10.1103/PhysRevB.82.075317 2010
Growth and morphology transitions in anisotropic disordered media 10.1103/PhysRevB.82.064202 2010
Extended interface states enhance valley splitting in Si/SiO_{2} 10.1103/PhysRevB.82.245314 2010
Model for spin coupling disorder effects on the susceptibility of antiferromagnetic nanochains 10.1063/1.3072361 2009
Quantum control and manipulation of donor electrons in Si-based quantum computing 10.1063/1.3124084 2009
Physical mechanisms of interface-mediated intervalley coupling in Si 10.1103/PhysRevB.80.081305 2009
Model of valley interference effects on a donor electron close to a Si?SiO_{2} interface 10.1103/PhysRevB.77.155302 2008
Quantum electronics: Hybrid electron control 10.1038/nphys1045 2008
External field control of donor electron exchange at the Si∕SiO2 interface 10.1103/physrevb.75.125311 2007
Proposal for electron spin relaxation measurements using double-donor excited states in Si quantum computer architectures 10.1103/PhysRevB.75.161304 2007
Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study 10.1063/1.2757205 2007
Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures 10.1103/PhysRevB.76.233302 2007
Electric-field driven donor-based charge qubits in semiconductors 10.1103/PhysRevB.73.045319 2006
Quantum Control of Donor Electrons at the Interface 10.1103/PhysRevLett.96.096802 2006
Magnetic susceptibility of exchange-disordered antiferromagnetic finite chains 10.1103/physrevb.73.104410 2006
Exchange coupling in semiconductor nanostructures: Validity and limitations of the Heitler-London approach 10.1103/PhysRevB.74.045310 2006
Magnetic-field-assisted manipulation and entanglement of Si spin qubits 10.1103/physrevb.74.081302 2006
Nanofabrication Aspects of Silicon-Based Spin Quantum Gates 10.1109/tnano.2004.840166 2005
Spin quantum computation in silicon nanostructures 10.1016/j.ssc.2004.12.037 2005
Charge qubits in semiconductor quantum computer architecture: Tunnel coupling and decoherence 10.1103/PhysRevB.71.235332 2005
Silicon-based spin and charge quantum computation 10.1590/s0001-37652005000200002 2005
Conduction-band tight-binding description for Si applied to P donors 10.1103/physrevb.72.193204 2005
Electric-field control and adiabatic evolution of shallow donor impurities in silicon 10.1103/PhysRevB.69.085320 2004
Shallow-donor wave functions and donor-pair exchange in silicon: theory and floating-phase Heitler-London approach 10.1103/PhysRevB.70.115207 2004
Disentangling the Exchange Coupling of Entangled Donors in the Si Quantum Computer Architecture 10.1103/PhysRevLett.90.067401 2003
Electromechanical effects in carbon nanotubes: Ab initio and analytical tight-binding calculations 10.1103/physrevb.67.161401 2003
Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots 10.1103/PhysRevB.68.235311 2003
Ab initio studies of electromechanical effects in carbon nanotubes 10.1590/s0103-97332002000200052 2002
Electric-field effects on the band-edge states of GaAs/AlAs coupled quantum wells 10.1590/s0103-97332002000200018 2002
Atomistic description of shallow levels in semiconductors 10.1103/physrevb.65.245205 2002
The Nature of Shallow-State Wave Functions in Semiconductors 10.1002/1521-3951(200207)232:1<106::aid-pssb106>3.0.co;2-5 2002
Switching times in electric-field-tunable GaAs/AlAs heterostructures 10.1063/1.1507621 2002
Strain effects on silicon donor exchange: Quantum computer architecture considerations 10.1103/PhysRevB.66.115201 2002
Polarons in Carbon Nanotubes 10.1103/physrevlett.86.3372 2001
Interface modulation and quantum well to quantum wire crossover in semiconductor heterostructures 10.1103/PhysRevB.64.245327 2001
Exchange in Silicon-Based Quantum Computer Architecture 10.1103/PhysRevLett.88.027903 2001
Chaos in one-dimensional lattices under intense laser fields 10.1007/s100510050137 2000
Tight-binding total-energy method applied to polyacetylene 10.1103/PhysRevB.61.7187 2000
An elastic model for the In-In correlations in InxGa1−xAs semiconductor alloys 10.1016/s0038-1098(00)00198-8 2000
Tight-binding description of the band-edge states in GaAs/AlAs quantum wells and superlattices 10.1103/physrevb.61.13021 2000
Role of Interface Imperfections on Intervalley Coupling in GaAs/AlAs Superlattices 10.1103/physrevlett.83.2034 1999
Segregation, interface morphology, and the optical properties of GaAs/AlAs quantum wells: A theoretical study 10.1103/physrevb.60.1787 1999
Semiconductor Hetrostructures with Non-Ideal Interfaces: Electronic Structure and Optical Properties 10.1002/(sici)1521-396x(199905)173:1<235::aid-pssa235>3.0.co;2-w 1999
Domain size effects in Barkhausen noise 10.1103/physreve.59.3884 1999
Tight-binding scheme for impurity states in semiconductors 10.1103/physrevb.59.2722 1999
Vacancy diffusion in silicon: analysis of transition state theory 10.1590/s0103-97331999000400046 1999
Quantum well to quantum wire crossover in AlAs/GaAs/AlAs heterostructures induced by interface roughness increase 10.1590/s0103-97331999000400048 1999
Atomic segregation and the optical properties of GaAs/AlAs heterostructures 1998
Band-gap closure of H[sub 2]-He mixtures under pressure 10.1063/1.477004 1998
Evolution of Random Networks 10.1103/physrevlett.81.2380 1998
Interface roughness and the optical properties of quantum wells 10.1016/S0038-1098(97)10126-010. 1998
Critical Analysis of the Virtual Crystal Approximation 1997
Disorder and size effects in the envelope-function approximation 10.1103/physrevb.56.9625 1997
Laser-induced Quantum Chaos in 1-D Crystals 10.48550/arXiv.cond-mat/9602065 1997
Optical effects of interdiffusion in GaAs/AlAs heterostructures: Atomic scale calculations 10.1063/1.117658 1996
Universality, thresholds and critical exponents in correlated percolation 10.1016/0378-4371(95)00076-j 1995
Band-gap closure of Ar(H2)2 under pressure 10.1103/physrevb.52.6147 1995
Direct-to-Indirect Crossover in Semiconductor Alloys: A First-Order Phase Transition? 10.1103/physrevlett.74.769 1995
Orientational disorder and the band gap of solid molecular hydrogen under pressure 10.1103/physrevb.50.7195 1994
Effect of quenched disorder on moving interfaces in two dimensions 10.1016/0378-4371(94)90512-6 1994
Partial-ordering effects in InxGa1-xP 10.1103/physrevb.47.4044 1993
Gap Properties Of Semiconductor Alloys 1993
Morphology and dynamics of interfaces in random two-dimensional media 10.1103/physrevlett.71.2074 1993
Pressure and composition effects on the gap properties of AlxGa1−xAs 10.1063/1.354211 1993
Physical criteria for the direct-to-indirect gap crossover in AlxGa1−xAs alloys 10.1063/1.106543 1992
Fluid wetting properties and the invasion of square networks 10.1103/physrevb.45.7762 1992
Effect of disorder and lattice type on domain-wall motion in two dimensions 10.1103/physrevb.46.5258 1992
Alloy Broadening of Semiconductor Impurity Lines Second-Neighbor Effects 10.1002/pssb.2221660116 1991
Gap properties of ordered compounds 10.1103/PhysRevB.43.4170 1991
Resonance Raman Scattering Of In X Al 1-X As Lattice Matched To Inp 10.1016/0038-1098(91)90630-E 1991
Gap states and localization properties of one-dimensional Fibonacci quasicrystals 10.1103/physrevb.42.6402 1990
Small-crystal approach to ordered semiconductor compounds 10.1103/physrevb.41.3670 1990
Elastic energies and order in epitaxial Si-Ge alloys 10.1103/physrevb.40.12554 1989
Growth-driven ordering and anisotropy in semiconductor alloys 10.1103/physrevb.40.8299 1989
Epitaxial growth of metastable semiconductor alloys: A novel simulation 10.1103/physrevb.38.13447 1988
Electronic theory of ordering in (GaAs)_{1-x}Ge_{2x} alloys 10.1103/physrevb.38.10524 1988
Random Soliton Distribution In Trans-Polyacetylene. 1987
Dressed bands approach for multi-photon transitions in solids 10.1088/0022-3719/19/28/024 1986
Dielectric properties of dilute bcc antiferroelectric systems 10.1103/physrevb.33.1855 1986
Dilute bcc antiferromagnet with first- and second-neighbor interactions 10.1016/0304-8853(86)90525-1 1986
Localization properties of random and partially ordered one-dimensional systems 10.1103/physrevb.32.4576 1985
Lennard-Jones triangular lattice gas in the Kikuchi approximation 10.1016/0378-4371(85)90091-3 1985
Thermodynamic properties of pure and dilute alkali cyanides: Short-range-order effects 10.1103/physrevb.31.6716 1985
Correlation effects in metastable (Ga As)1−x Ge2x alloys 10.1016/0038-1098(85)90194-2 1985
Electric-dipole ordering in alkali cyanides: NaCN and KCN 10.1103/physrevb.29.3586 1984
Renormalization-group methods for the spectra of disordered chains 10.1103/physrevb.27.7703 1983
Renormalization Group Treatment For The Electronic Spectrum Of Partially Ordered 1-D Alloys 1983
RENORMALIZATION-GROUP TREATMENT FOR SPIN-WAVES IN THE RANDOMLY DISORDERED HEISENBERG CHAIN 1983
Theory of electron scattering from a Heisenberg antiferromagnet: Surface and bulk effects 10.1016/0304-8853(83)90734-5 1983
Theory of inelastic electron scattering from antiferromagnetic NiO: Surface and bulk effects 10.1103/physrevb.27.346 1983
Optical properties of crystals with impurities 10.1088/0022-3719/15/35/020 1982
Localized States In Polymeric Molecules 1: Transfer Matrix For Long Lange Interactions 1981
Local Density Of States In A Disordered Chain: A Renormalization Group Approach 1981
Transfer Matrix Treatment Of Atomic Chemisorption On Transition Metal Surfaces 1981
TRANSFER-MATRIX THEORY FOR THE OPTICAL-ABSORPTION SPECTRUM OF MIXED-CRYSTALS 1981
Dynamic response of local magnons: Single-impurity limit in one-dimensional magnets 10.1103/physrevb.22.3325 1980
DYNAMIC-RESPONSE OF A DISORDERED FERROMAGNETIC CHAIN - ALLOY TRANSFER-MATRIX APPROXIMATION 1980
SELF-CONSISTENT MODEL FOR THE ELECTRONIC-STRUCTURE OF THE U-CENTER IN ALKALI-HALIDES 1979
Electron-hydrogen-atom collisions in the presence of a laser field: Born-Oppenheimer approximation 10.1103/physreva.19.1058 1979
Theory of electron-hydrogen-atom collisions in the presence of a laser field 10.1103/physreva.17.1900 1978
The antiferroelectric phase in KCN 10.1088/0022-3719/11/22/013 1978
A Cluster-Bethe Lattice Treatment for the F-Center in Alkali Halides 10.1002/pssb.2220870141 1978
Vacancy states in rock-salt ionic compounds 10.1103/physrevb.13.5511 1976
Electronic charge density at nuclear sites in beryllium metal: Dependence on lattice constants 10.1103/physrevb.12.2080 1975
Magnetic properties of the transition-metal monoxides: NiO 10.1088/0022-3719/8/5/015 1975
Low temperature conductivity of transition-metal oxides 10.1016/0022-4596(75)90339-4 1975
Electronic structure of the transition-metal monoxides 10.1088/0022-3719/7/2/010 1974
Eventos:

(0.00% eventos com DOI)

Titulo DOI Ano
Silicon-based spin quantum computation and the shallow donor exchange gate 2005
Srain effects on the electronic and optical properties of InAs/GaAs Quantum Dots: Tight-binding Study 2005
Growth In Systems With Quenched Disorder 1991
Ordering, Anisotropy And Growth-Kinetics Of Semiconductor Alloys 1990
Nonperturbative Approaches Of Laser Interaction With Matter: From Atoms To Solids 1989
Impurity Levels In Tetrahedral Solids: A Cluster-Bethe Lattice Study. 1988
Electronic Energy And Ordering In "(Ga As) Ind. 1-X Ge Ind 2x". 1988
Short-And Long-Range-Order Effects In Metastable"(Iii-V) Ind. 1-X Iv Ind. 2x"Alloys. 1987
Dieletric Properperties Of Mixed Alkali Cyanide-Halide Systems. 1985
Pressure And Composition Effects On The Gap Properties Of Al X Ga 1-X As 1900
Alloy Bradening Of Semiconductor Physics 1900
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