Belita Koiller
Instituição:
Universidade Federal do Rio de Janeiro
Centro:
Centro de Ciências Matemáticas e da Natureza
Unidade:
Instituto de Física
Departamento:
Gabinete do Diretor do Instituto Física
Formação:
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Universidade da California em Berkeleey
| Pós-Doutorado | 1982 - 1983
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Universidade da California em Berkeley
Fisica | Doutorado | 1972 - 1975
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Pontifícia Universidade Católica do Rio de Janeiro
Fisica | Graduação | 1968 - 1971
Laboratórios:
Nenhum laboratório cadastrado
Nuvens de Palavras:
Artigos:
(90.84% artigos com DOI)
Titulo | DOI | Ano |
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Atomic-scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory | 10.1103/physrevb.104.125433 | 2021 |
Theory of hole-spin qubits in strained germanium quantum dots | 10.1103/PhysRevB.103.125201 | 2021 |
Lifting of spin blockade by charged impurities in Si-MOS double quantum dot devices | 10.1103/PhysRevB.101.155411 | 2020 |
Stokes-anti-Stokes correlated photon properties akin to photonic Cooper pairs | 10.1103/physrevb.99.100503 | 2019 |
Disordered Si:P nanostructures as switches and wires for nanodevices | 10.1103/physrevb.99.205422 | 2019 |
Physical Properties of Photonic Cooper Pairs Generated via Correlated Stokes-anti-Stokes Raman Scattering | 10.1002/pssb.201900218 | 2019 |
Two-dimensional semiconductors pave the way towards dopant-based quantum computing | 10.3762/bjnano.9.249 | 2018 |
Adequacy of Si:P chains as Fermi-Hubbard simulators | 10.1038/s41534-017-0051-1 | 2018 |
Photonic Counterparts of Cooper Pairs | 10.1103/PhysRevLett.119.193603 | 2017 |
Donor wave functions in Si gauged by STM images | 10.1103/physrevb.93.045303 | 2016 |
Mitigating valley-driven localization in atomically thin dopant chains in Si | 10.1103/PhysRevB.94.115425 | 2016 |
Donors in Ge as qubits -Establishing physical attributes | 10.1209/0295-5075/116/20002 | 2016 |
Theory of one and two donors in silicon | 10.1088/0953-8984/27/15/154208 | 2015 |
Dark-state adiabatic passage with spin-one particles | 10.1103/PhysRevA.90.012319 | 2014 |
An Exchange-Coupled Donor Molecule in Silicon | 10.1021/nl5023942 | 2014 |
Splitting valleys in Si/: Identification and control of interface states | 10.1103/PhysRevB.89.205307 | 2014 |
Genetic design of enhanced valley splitting towards a spin qubit in silicon | 10.1038/ncomms3396 | 2013 |
Correlations and Werner states in finite spin linear arrays | 10.1063/1.4825152 | 2013 |
Driven flow with exclusion and transport in graphenelike structures | 10.1103/physreve.88.042133 | 2013 |
Valley-Based Noise-Resistant Quantum Computation Using Si Quantum Dots | 10.1103/PhysRevLett.108.126804 | 2012 |
Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_{2} interface | 10.1103/PhysRevB.86.035317 | 2012 |
Hyperfine interactions in silicon quantum dots | 10.1103/PhysRevB.83.165301 | 2011 |
Intervalley coupling for interface-bound electrons in silicon: An effective mass study | 10.1103/PhysRevB.84.155320 | 2011 |
Quantum computation with doped silicon cavities | 10.1103/PhysRevB.81.085325 | 2010 |
Heterointerface effects on the charging energy of the shallow D^{?} ground state in silicon: Role of dielectric mismatch | 10.1103/PhysRevB.82.075317 | 2010 |
Growth and morphology transitions in anisotropic disordered media | 10.1103/PhysRevB.82.064202 | 2010 |
Extended interface states enhance valley splitting in Si/SiO_{2} | 10.1103/PhysRevB.82.245314 | 2010 |
Model for spin coupling disorder effects on the susceptibility of antiferromagnetic nanochains | 10.1063/1.3072361 | 2009 |
Quantum control and manipulation of donor electrons in Si-based quantum computing | 10.1063/1.3124084 | 2009 |
Physical mechanisms of interface-mediated intervalley coupling in Si | 10.1103/PhysRevB.80.081305 | 2009 |
Model of valley interference effects on a donor electron close to a Si?SiO_{2} interface | 10.1103/PhysRevB.77.155302 | 2008 |
Quantum electronics: Hybrid electron control | 10.1038/nphys1045 | 2008 |
External field control of donor electron exchange at the Si∕SiO2 interface | 10.1103/physrevb.75.125311 | 2007 |
Proposal for electron spin relaxation measurements using double-donor excited states in Si quantum computer architectures | 10.1103/PhysRevB.75.161304 | 2007 |
Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study | 10.1063/1.2757205 | 2007 |
Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures | 10.1103/PhysRevB.76.233302 | 2007 |
Electric-field driven donor-based charge qubits in semiconductors | 10.1103/PhysRevB.73.045319 | 2006 |
Quantum Control of Donor Electrons at the Interface | 10.1103/PhysRevLett.96.096802 | 2006 |
Magnetic susceptibility of exchange-disordered antiferromagnetic finite chains | 10.1103/physrevb.73.104410 | 2006 |
Exchange coupling in semiconductor nanostructures: Validity and limitations of the Heitler-London approach | 10.1103/PhysRevB.74.045310 | 2006 |
Magnetic-field-assisted manipulation and entanglement of Si spin qubits | 10.1103/physrevb.74.081302 | 2006 |
Nanofabrication Aspects of Silicon-Based Spin Quantum Gates | 10.1109/tnano.2004.840166 | 2005 |
Spin quantum computation in silicon nanostructures | 10.1016/j.ssc.2004.12.037 | 2005 |
Charge qubits in semiconductor quantum computer architecture: Tunnel coupling and decoherence | 10.1103/PhysRevB.71.235332 | 2005 |
Silicon-based spin and charge quantum computation | 10.1590/s0001-37652005000200002 | 2005 |
Conduction-band tight-binding description for Si applied to P donors | 10.1103/physrevb.72.193204 | 2005 |
Electric-field control and adiabatic evolution of shallow donor impurities in silicon | 10.1103/PhysRevB.69.085320 | 2004 |
Shallow-donor wave functions and donor-pair exchange in silicon: theory and floating-phase Heitler-London approach | 10.1103/PhysRevB.70.115207 | 2004 |
Disentangling the Exchange Coupling of Entangled Donors in the Si Quantum Computer Architecture | 10.1103/PhysRevLett.90.067401 | 2003 |
Electromechanical effects in carbon nanotubes: Ab initio and analytical tight-binding calculations | 10.1103/physrevb.67.161401 | 2003 |
Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots | 10.1103/PhysRevB.68.235311 | 2003 |
Ab initio studies of electromechanical effects in carbon nanotubes | 10.1590/s0103-97332002000200052 | 2002 |
Electric-field effects on the band-edge states of GaAs/AlAs coupled quantum wells | 10.1590/s0103-97332002000200018 | 2002 |
Atomistic description of shallow levels in semiconductors | 10.1103/physrevb.65.245205 | 2002 |
The Nature of Shallow-State Wave Functions in Semiconductors | 10.1002/1521-3951(200207)232:1<106::aid-pssb106>3.0.co;2-5 | 2002 |
Switching times in electric-field-tunable GaAs/AlAs heterostructures | 10.1063/1.1507621 | 2002 |
Strain effects on silicon donor exchange: Quantum computer architecture considerations | 10.1103/PhysRevB.66.115201 | 2002 |
Polarons in Carbon Nanotubes | 10.1103/physrevlett.86.3372 | 2001 |
Interface modulation and quantum well to quantum wire crossover in semiconductor heterostructures | 10.1103/PhysRevB.64.245327 | 2001 |
Exchange in Silicon-Based Quantum Computer Architecture | 10.1103/PhysRevLett.88.027903 | 2001 |
Chaos in one-dimensional lattices under intense laser fields | 10.1007/s100510050137 | 2000 |
Tight-binding total-energy method applied to polyacetylene | 10.1103/PhysRevB.61.7187 | 2000 |
An elastic model for the In-In correlations in InxGa1−xAs semiconductor alloys | 10.1016/s0038-1098(00)00198-8 | 2000 |
Tight-binding description of the band-edge states in GaAs/AlAs quantum wells and superlattices | 10.1103/physrevb.61.13021 | 2000 |
Role of Interface Imperfections on Intervalley Coupling in GaAs/AlAs Superlattices | 10.1103/physrevlett.83.2034 | 1999 |
Segregation, interface morphology, and the optical properties of GaAs/AlAs quantum wells: A theoretical study | 10.1103/physrevb.60.1787 | 1999 |
Semiconductor Hetrostructures with Non-Ideal Interfaces: Electronic Structure and Optical Properties | 10.1002/(sici)1521-396x(199905)173:1<235::aid-pssa235>3.0.co;2-w | 1999 |
Domain size effects in Barkhausen noise | 10.1103/physreve.59.3884 | 1999 |
Tight-binding scheme for impurity states in semiconductors | 10.1103/physrevb.59.2722 | 1999 |
Vacancy diffusion in silicon: analysis of transition state theory | 10.1590/s0103-97331999000400046 | 1999 |
Quantum well to quantum wire crossover in AlAs/GaAs/AlAs heterostructures induced by interface roughness increase | 10.1590/s0103-97331999000400048 | 1999 |
Atomic segregation and the optical properties of GaAs/AlAs heterostructures | 1998 | |
Band-gap closure of H[sub 2]-He mixtures under pressure | 10.1063/1.477004 | 1998 |
Evolution of Random Networks | 10.1103/physrevlett.81.2380 | 1998 |
Interface roughness and the optical properties of quantum wells | 10.1016/S0038-1098(97)10126-010. | 1998 |
Critical Analysis of the Virtual Crystal Approximation | 1997 | |
Disorder and size effects in the envelope-function approximation | 10.1103/physrevb.56.9625 | 1997 |
Laser-induced Quantum Chaos in 1-D Crystals | 10.48550/arXiv.cond-mat/9602065 | 1997 |
Optical effects of interdiffusion in GaAs/AlAs heterostructures: Atomic scale calculations | 10.1063/1.117658 | 1996 |
Universality, thresholds and critical exponents in correlated percolation | 10.1016/0378-4371(95)00076-j | 1995 |
Band-gap closure of Ar(H2)2 under pressure | 10.1103/physrevb.52.6147 | 1995 |
Direct-to-Indirect Crossover in Semiconductor Alloys: A First-Order Phase Transition? | 10.1103/physrevlett.74.769 | 1995 |
Orientational disorder and the band gap of solid molecular hydrogen under pressure | 10.1103/physrevb.50.7195 | 1994 |
Effect of quenched disorder on moving interfaces in two dimensions | 10.1016/0378-4371(94)90512-6 | 1994 |
Partial-ordering effects in InxGa1-xP | 10.1103/physrevb.47.4044 | 1993 |
Gap Properties Of Semiconductor Alloys | 1993 | |
Morphology and dynamics of interfaces in random two-dimensional media | 10.1103/physrevlett.71.2074 | 1993 |
Pressure and composition effects on the gap properties of AlxGa1−xAs | 10.1063/1.354211 | 1993 |
Physical criteria for the direct-to-indirect gap crossover in AlxGa1−xAs alloys | 10.1063/1.106543 | 1992 |
Fluid wetting properties and the invasion of square networks | 10.1103/physrevb.45.7762 | 1992 |
Effect of disorder and lattice type on domain-wall motion in two dimensions | 10.1103/physrevb.46.5258 | 1992 |
Alloy Broadening of Semiconductor Impurity Lines Second-Neighbor Effects | 10.1002/pssb.2221660116 | 1991 |
Gap properties of ordered compounds | 10.1103/PhysRevB.43.4170 | 1991 |
Resonance Raman Scattering Of In X Al 1-X As Lattice Matched To Inp | 10.1016/0038-1098(91)90630-E | 1991 |
Gap states and localization properties of one-dimensional Fibonacci quasicrystals | 10.1103/physrevb.42.6402 | 1990 |
Small-crystal approach to ordered semiconductor compounds | 10.1103/physrevb.41.3670 | 1990 |
Elastic energies and order in epitaxial Si-Ge alloys | 10.1103/physrevb.40.12554 | 1989 |
Growth-driven ordering and anisotropy in semiconductor alloys | 10.1103/physrevb.40.8299 | 1989 |
Epitaxial growth of metastable semiconductor alloys: A novel simulation | 10.1103/physrevb.38.13447 | 1988 |
Electronic theory of ordering in (GaAs)_{1-x}Ge_{2x} alloys | 10.1103/physrevb.38.10524 | 1988 |
Random Soliton Distribution In Trans-Polyacetylene. | 1987 | |
Dressed bands approach for multi-photon transitions in solids | 10.1088/0022-3719/19/28/024 | 1986 |
Dielectric properties of dilute bcc antiferroelectric systems | 10.1103/physrevb.33.1855 | 1986 |
Dilute bcc antiferromagnet with first- and second-neighbor interactions | 10.1016/0304-8853(86)90525-1 | 1986 |
Localization properties of random and partially ordered one-dimensional systems | 10.1103/physrevb.32.4576 | 1985 |
Lennard-Jones triangular lattice gas in the Kikuchi approximation | 10.1016/0378-4371(85)90091-3 | 1985 |
Thermodynamic properties of pure and dilute alkali cyanides: Short-range-order effects | 10.1103/physrevb.31.6716 | 1985 |
Correlation effects in metastable (Ga As)1−x Ge2x alloys | 10.1016/0038-1098(85)90194-2 | 1985 |
Electric-dipole ordering in alkali cyanides: NaCN and KCN | 10.1103/physrevb.29.3586 | 1984 |
Renormalization-group methods for the spectra of disordered chains | 10.1103/physrevb.27.7703 | 1983 |
Renormalization Group Treatment For The Electronic Spectrum Of Partially Ordered 1-D Alloys | 1983 | |
RENORMALIZATION-GROUP TREATMENT FOR SPIN-WAVES IN THE RANDOMLY DISORDERED HEISENBERG CHAIN | 1983 | |
Theory of electron scattering from a Heisenberg antiferromagnet: Surface and bulk effects | 10.1016/0304-8853(83)90734-5 | 1983 |
Theory of inelastic electron scattering from antiferromagnetic NiO: Surface and bulk effects | 10.1103/physrevb.27.346 | 1983 |
Optical properties of crystals with impurities | 10.1088/0022-3719/15/35/020 | 1982 |
Localized States In Polymeric Molecules 1: Transfer Matrix For Long Lange Interactions | 1981 | |
Local Density Of States In A Disordered Chain: A Renormalization Group Approach | 1981 | |
Transfer Matrix Treatment Of Atomic Chemisorption On Transition Metal Surfaces | 1981 | |
TRANSFER-MATRIX THEORY FOR THE OPTICAL-ABSORPTION SPECTRUM OF MIXED-CRYSTALS | 1981 | |
Dynamic response of local magnons: Single-impurity limit in one-dimensional magnets | 10.1103/physrevb.22.3325 | 1980 |
DYNAMIC-RESPONSE OF A DISORDERED FERROMAGNETIC CHAIN - ALLOY TRANSFER-MATRIX APPROXIMATION | 1980 | |
SELF-CONSISTENT MODEL FOR THE ELECTRONIC-STRUCTURE OF THE U-CENTER IN ALKALI-HALIDES | 1979 | |
Electron-hydrogen-atom collisions in the presence of a laser field: Born-Oppenheimer approximation | 10.1103/physreva.19.1058 | 1979 |
Theory of electron-hydrogen-atom collisions in the presence of a laser field | 10.1103/physreva.17.1900 | 1978 |
The antiferroelectric phase in KCN | 10.1088/0022-3719/11/22/013 | 1978 |
A Cluster-Bethe Lattice Treatment for the F-Center in Alkali Halides | 10.1002/pssb.2220870141 | 1978 |
Vacancy states in rock-salt ionic compounds | 10.1103/physrevb.13.5511 | 1976 |
Electronic charge density at nuclear sites in beryllium metal: Dependence on lattice constants | 10.1103/physrevb.12.2080 | 1975 |
Magnetic properties of the transition-metal monoxides: NiO | 10.1088/0022-3719/8/5/015 | 1975 |
Low temperature conductivity of transition-metal oxides | 10.1016/0022-4596(75)90339-4 | 1975 |
Electronic structure of the transition-metal monoxides | 10.1088/0022-3719/7/2/010 | 1974 |
Eventos:
(0.00% eventos com DOI)