Mauricio Pamplona Pires
Instituição:
Universidade Federal do Rio de Janeiro
Centro:
Centro de Ciências Matemáticas e da Natureza
Unidade:
Instituto de Física
Departamento:
Gabinete do Diretor do Instituto Física
Formação:
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Alcatel Thales III-V Lab
| Pós-Doutorado | 2011 - 2012
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Pontifícia Universidade Católica do Rio de Janeiro
Física | Doutorado | 1993 - 1998
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Pontifícia Universidade Católica do Rio de Janeiro
Física | Mestrado | 1991 - 1993
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Pontifícia Universidade Católica do Rio de Janeiro
Física | Graduação | 1987 - 1990
Laboratórios:
Nuvens de Palavras:
Artigos:
Nenhum artigo cadastrado
Eventos:
(6.10% eventos com DOI)
| Titulo | DOI | Ano |
|---|---|---|
| Dark Current in Quantum Bragg Mirror Detectors (QBMD) | 2023 | |
| Quantum Bragg Mirror Detector Optimization Applying Genetic Algorithms | 2023 | |
| OBTAINING OF PVC-PMMA POLYMER BLENDS FOR USE AS FLEXIBLE SUBSTRATES FOR III-V SOLAR CELLS | 2023 | |
| Exploring In(Ga)As/InGaP quantum dot structures for intermediate band solar cells | 2023 | |
| Preparation and characterization of PVC-PMMA polymer blends as flexible bases for III-V photovoltaics | 2023 | |
| Mapping and Optimization of Oscillator Strength in Quantum Bragg Mirror Detectors as a Function of their Dimensions | 2023 | |
| Dark Current and Electron Activation Energy in Quantum Bragg Mirror Detectors | 2023 | |
| Dual-color detection using two quasi-bound states in the continuum in an InGaAs/InAlAs superlattice | 10.1109/sbmicro55822.2022.9881050 | 2022 |
| e <sup>-</sup> mulate: a user-friendly software to calculate optoelectronic properties of quantum well systems | 10.1109/sbmicro50945.2021.9585740 | 2021 |
| Optical Characterization of InAs/InGaP Intermediate Band Solar Cells | 10.1109/SBMicro50945.2021.9585773 | 2021 |
| Quantum Well Infrared Photodetector for the SWIR Range | 2019 | |
| Effect of the dopant location and the number of Bragg mirrors on the performance of superlattice infrared photodetectors | 10.1109/sbmicro.2019.8919485 | 2019 |
| Structural optimization of a superlattice infrared photodetector by evolutionary computation algorithms | 10.1109/sbmicro.2019.8919346 | 2019 |
| Dual Color Asymmetric Superlattice Infrared Photodetector | 10.1109/sbmicro.2019.8919384 | 2019 |
| Transition Energy Calculations of Type II In(As)P/InGaP Quantum Dots for Intermediate Band Solar Cells | 10.1109/sbmicro.2019.8919441 | 2019 |
| Intermediate band solar cells with InP/InGaP type II quantum dots | 2019 | |
| InGaP films grown on Ge | 2019 | |
| Effect of InP epitaxial layer removal from an MOVPE reactor on in-situ Zn diffusion for the development of focal plane arrays | 2018 | |
| InGaP solar cell as the top junction of a multiple junction device for spatial applications | 2018 | |
| InxGa1-xAs/InyGa1-yP Multiple Quantum Wells for Multijunction Solar Cells | 2018 | |
| Growth and Characterization of Ge Junction for Triple Junction Solar Cell | 2018 | |
| Symmetric and asymmetric superlattice quantum well infrared photodetectors | 2018 | |
| Discerning intraband absorption spectra techniques for QDIPs and QWIPs | 2017 | |
| Optimization of the InGaP top pn junction for a new triple tandem solar cell design | 2017 | |
| The role of defects on the efficiency of intermediate band solar cell based on III-V semiconductors | 2017 | |
| Asymmetric superlattice quantum well infrared photodetector | 2017 | |
| Simulation of InGaAs/InGaP Multiple Quantum Well Systems for Multijunction Solar Cell | 2017 | |
| Optimization of contact grids for solar cells with genetic algorithms | 2017 | |
| Modeling the Schottky like contacts on InP-InGaP nanowires tunnel diodes | 2017 | |
| InGaAs/InGaP Multiple Quantum Well Systems for Multijunction Solar Cells for Space Applications | 2017 | |
| Asymmetric superlattice quantum well infrared photodetector with dual-mode operation | 2017 | |
| Strategic semiconductor devices: infrared photodetectors and solar cells | 2017 | |
| Photovoltaic asymmetric superlattice QWIP with confined states in the continuum | 2017 | |
| Characterization of (Al)GaAs based nanowires grown by selective area epitaxy for single photon sources | 2017 | |
| Improving the figures of merit of intermediate band solar cells by controlling the capping procedure of the quantum dots | 10.1109/pvsc.2016.7749996 | 2016 |
| Influence of the quantum dot capping procedure on the density of defects of InAs/GaAs quantum dot intermediate band solar cells | 2016 | |
| Misfit-Strain Relaxation and its Suppression in InAs Quantum Dots for Intermediate Band Solar Cells2016 | 2016 | |
| Detecting milk components using intraband infrared photodetectors | 2016 | |
| Process calibration of HSQ mask for selective area growth (SAG) of InAs/GaAs QD-in-NW for single photon emitters | 2015 | |
| InAs quantum dot formation on GaAs for the optimization of intermediate band solar cells | 2015 | |
| Study of the growth parameters of InAs quantum dots on (Al)GaAs for intermediate band solar cells | 2015 | |
| Observation of the initial stages of InAs quantum dot formation on GaAs | 2015 | |
| Selective Area Growth (SAG) of InAs/GaAs quantum-dot-in-wire with an N2 carrier MOCVD | 2015 | |
| From InAs extended monolayer flat 2D terraces to 3D islands grown on GaAs substrates | 2015 | |
| InAs quantum dots on GaAs for intermediate band solar cells | 2015 | |
| Strain Relaxation in InAs Quantum Dots and its Suppression by Indium Flushing | 2015 | |
| Selective Area Growth (SAG) of InAs/GaAs quantumdot-in-wire with an N2 carrier MOCVD | 2015 | |
| In-situ monitored growth of InGaAs and InAlAs on InP by reflectance anisotropy spectroscopy | 2014 | |
| Reflectance anisotropy spectroscopy oscillations on GaAs:C/GaAs:Si tunnel diodes grown by MOVPE. | 2014 | |
| Growth and characterization of InAs quantum dots grown on (Al)GaAs for Intermediate Band Solar Cells | 2014 | |
| Superlattice quantum well infrared photodetectors for detection of radiation energies above 400 meV | 2014 | |
| Observation of an Electronic Excited State Localized in the Continuum | 2014 | |
| InGaAs/InAlAs Quantum Well Infrared Photodetectors for Operation in the 1.7 to 3.1 μm Wavelength Range | 2014 | |
| InAs quantum dot growth on GaAs and AlGaAs by MOVPE for Intermediate band solar cells | 2014 | |
| Improving the quality of InAs quantum dots grown on AlGaAs for optimized intermediate band solar cells | 2014 | |
| Dark Current Noise and Noise Gain in Quantum-Well Infrared Photodetectors | 2014 | |
| Polarization dependent photocurrent of InAs/AlGaAs quantum dot intermediate-band solar cells | 2013 | |
| Quantum well infrared photodetector based on GaAs/AlGaAs superlattice for CO2 detection. | 2013 | |
| QWIP´s performance as a function of the quantum well doping | 2013 | |
| Optimization of InAs quantum dots on GaAlAs for solar cells | 2013 | |
| Time dependent modelling for selective area growth thick deposits | 2013 | |
| ION-BEAM IMPLANTATION AS A TOOL FOR SYNTHESIS OF PLASMONIC DEVICES | 2013 | |
| Image analysis of self-assembled quantum dots | 2012 | |
| Quantum well infrared photodetectors based in photonic crystal slabs | 2012 | |
| InGaAs focal plane array developments at III-V Lab | 10.1117/12.921134 | 2012 |
| Growing arrays of coherent and incoherent InAs islands induced by focused ion beam | 2011 | |
| Manipulation of magnetic and electronic properties of Ga1−xMnxAs by ion-beam irradiation | 2011 | |
| Current self-oscillations in GaAs/AlGaAs superlattice at 77 K | 2011 | |
| Light absorption and carrier dynamics in quantum well infrared photodetectors: the virtual states approach | 2011 | |
| Selfassembled quantum dots growth prediction by quanyum inspired linear genetic programming | 2011 | |
| Exceptionally narrow band quantum dot infrared photodetector | 2011 | |
| Resonance modes in InAs/InGaAlAs/InP Quantum Dot Microdisk Resonators | 2010 | |
| Dual Sign Photocurrent in Quantum Dot Structures for Infrared Photodetection | 2010 | |
| Selecting the operation wavelength of a QDIP by the sign of the applied bias. | 2010 | |
| CARRIER EXTRACTION MECHANISMS IN QUANTUM DOT INFRARED PHOTODETECTORS | 2010 | |
| Quantum dots coupled to a parabolic quantum well structure for infrared photodetectors: growth, characterization and applications | 2010 | |
| Growth and Study of Quantum-Dots Infrared Photodetectors Coupled with Parabolic Quantum Wells | 2010 | |
| Estudo da dinâmica de portadores em fotodetectores baseados em poços quânticos (QWIPs) de InGaAs/InAlAs com aplicação em detecção de gases. | 2010 | |
| Fabricação de fotodetectores de infravermelho baseados em poços quânticos (QWIPs) para detecção de gases com aplicação em monitoramento ambiental e diagn ́ostico médico. | 2010 | |
| Intraband Auger effect in InAs/InGaAlAs/InP quantum dot structures | 10.1088/1742-6596/167/1/012001 | 2009 |
| Growth if InMnAs nanostructures over InP patterned substrates using MOVPE | 2009 | |
| Probing carrier dynamics in quantum dot structures in the mid-infrared region by using two complementary spectroscopi techniques | 2009 | |
| Growth of magnetic semiconductor using MOVPE | 2009 | |
| Quantum dot infrared photodetectors including a quantum well parabolic potential | 2009 | |
| Probing carrier dynamics in quantum dot structures in the mid-infrared region by using two complementary spectroscopic techniques | 2009 | |
| Growth of GaAs whisker bunches on Si clusters | 2009 | |
| InGaAs/InGaAlAs/InAs/InP very selective quantum dot infrared photodetector for 12 micron | 2009 | |
| A computer based optimization method for quantum dot growth | 2008 | |
| Evidence for an Intraband Auger Effect in InAs/InGaAlAs/InP quantum dot structures | 2008 | |
| Tuning of quantum cascade lasers using chromic claddings | 2008 | |
| Observation of an Intraband Auger effect in InAs/InGaAlAs/InP quantum dot structures | 2008 | |
| Growth of InAs nanostructures on InP produced by nanolithography and metalorganic vapor phase epitaxy | 2008 | |
| Intraband Auger effect in InAs/InGaAlAs/InP quantum dot structures | 2008 | |
| Optical properties of InAs quantum dots with different doping levels grown on InGaAlAs | 2008 | |
| Inference of quantum dots growth behavior by neural network | 2008 | |
| Intraband Auger effect in InAs/InGaAlAs/InP Quantum Dot Structures | 2008 | |
| One dimensional oriented InAs/InP nanostructure array produced by nanolithography and metalorganic vapor phase epitaxy | 2008 | |
| Computational intelligence applied to the growth of quantum dots | 2008 | |
| Contribution of As/P exchange reaction on the growth of InAs nanostructures on pits producedby AFM nanolithography | 2008 | |
| Irradiação de fotodiodos de poços quânticos de InGaAs/InAlAs por | 2008 | |
| Intraband Auger effect in InAs/InGaAlAs/InP Quantum Dot | 2008 | |
| Effect of ion irradiation on Ga1-xMnxAs films | 2008 | |
| Optical properties of InAs quantum dots gorwn on variable stoichiometry in InGaAs and InGaAlAs layers | 2007 | |
| Studies of Mn implantation on GaAs | 2007 | |
| Magnetotunneling through stacked InAs/InGaAs/InP self-assembled quantum dots | 2006 | |
| Polarization Dependence of Absorption and Photocurrent in QDIPs | 2006 | |
| Photoluminescent properties of InAs quantum dots grown by MOVPE on an InAlGaAs layer and their dependence on the layer stoichiometry | 2006 | |
| Magnetic field induced rearrangement of the electric field domains in weakly coupled superlatices | 2006 | |
| InAs quantum dotson a patterned InP surface by force microscopy lithography | 2006 | |
| Implantação de Mn e Co em GaAs na fabricação de semicondutores magnéticos diluídos | 2006 | |
| Microcavidades de GaAs na forma de pirâmides invertidas crescidas pela técnica de MOCVD | 2006 | |
| Magnetotunelamento em poços quânticos auto-organizados de InAs/InGaAs/InP | 2006 | |
| Magnetic field induced rearrangement of the electric field domains in AlGaAs/GaAs weakly coupled superlattices | 2006 | |
| Desenvolvimento de detectores de infravermelho nacionais baseados em QWIPs de InGAAs/InAlAs e GaAs/AlGaAs para aplicações estratégicas | 2006 | |
| Transições intrabanda em pontos quânticos de InAs/InGaAs/InP para detecção infravermelha | 2006 | |
| Sensores de infravermelho baseados em semicondutores da família III-V utilizando transição intrabanda | 2006 | |
| Intraband transitions in InAs/InGaAs/InP quantum dots for infrared photodetection | 2006 | |
| Development of mid-infrared photodetectors based on intraband transitions in GaAs/AlGaAs multi-quantum wells | 2006 | |
| Enhancement of the Contrast Ratio in Amplitude Modulators with a Delta Doping Superlattice | 2006 | |
| Polarization dependence of photocurent in InAs/InGaAs/InP quantum-dot infrared photodetectors | 2006 | |
| Design, fabrication and performance of microdevices for infrared detection applications | 2006 | |
| Intraband transitions in InAs/InGaAs/InP quantum dots for infrared photodetection | 2006 | |
| Memory effect in the resistivity of quasi-periodic weakly coupled multi quantum wells induced by a magnetic field | 2006 | |
| Polarization dependence of intraband transitions in QDIPs | 2006 | |
| Tunneling through InAs/InGaAs/InP quantum dots states | 2006 | |
| Observation of the enhancement of the Stark shift in amplitude modulators with a delta doping superlattice | 2005 | |
| InAs/InGaAs/InP structures for quantum dot infrared photodetectors grown by MOVPE | 2005 | |
| Influence of stoichiometry on the luminescent properties of InAs quantum dots grown on a InxGa1-xAs/InP heterostructure | 2005 | |
| Effect of the alloy composition on the properties of InAs quantum dots grown on a InxGa1-xAs/InP heterostructure for mid-infrared detection | 2005 | |
| Transmission electron microscopy characterization of InAs quantum dots | 2005 | |
| Transmission electron microscope images of dot-in-a-well InAs/InGaAs/InP structures | 2005 | |
| Influence of stoichiometry on the luminescence properties of InAs quantum dots grown on a InGaAs/InP heterostructure | 2005 | |
| Controlling site deposition of InAs quantum dots on InP surfaces patterned by atomic force microscopy | 2005 | |
| Study of the conduction mechanisms in InGaas/InAlas strained multiple quantum well photovoltaic structures | 2004 | |
| Improved performance of amplitude modulator structures containing an nipi delta doping superlattice | 2004 | |
| InAs quantum dots over InGaAs for infrared photodetectors | 2004 | |
| Enhanced electroabsorption in MQW structures containing an nipi delta doping superlattice | 2004 | |
| InAs quantum dots grown on InAlGaAs | 2003 | |
| Stark shift in multiple quantum well structures containing a delta doping superlattice for amplitude modulation | 2003 | |
| In-plane versus perpendicular geometry photocurrent measurements of multiple quantum well structures for amplitude modulation | 2003 | |
| Optical characterization of delta doping superlatices | 2003 | |
| Improved performance of MQW amplitude modulators by the introduction of a delta-doping superlattice | 2003 | |
| Some key issues on the optimization of multiple quantum well structures for amplitude modulation | 2003 | |
| Luminescence from miniband states in heavily doped superlattices | 2003 | |
| Optimization of InGaAs/InAlAs strained multiple quantum wells for amplitude modulators | 2003 | |
| Measures of near field in waveguides of InGaAs/InAlAs MQW structures for amplitude modulators | 2003 | |
| InAs quantum dots grown on InAlGaAs lattice matched to InP | 2002 | |
| Effect of growth temperature on C-doped InAlAs layers grown by LP-MOVPE | 2002 | |
| Effects of carrier traps in strained multiple quantum wells | 2001 | |
| Kinetic growth for changes in alloy composition in III-V ternaries grown by selective area epitaxy | 2001 | |
| Optical properties of multiple quantum well structures containing a delta-doping nipi superlattice | 2001 | |
| Influence of mask design on the growth of InGaAs/InAlAs quantum wells on patterned substrates | 1999 | |
| Influence of mask design on the optical transitions of InGaAs/InAlAs quantum well grown by selective area epitaxy | 1999 | |
| Insensitive Polarization waveguide amplitude modulator on strained InGaAs/InAlAs MQW | 1999 | |
| Chirp dependence in InGaAs/InAlAs MQW electro-absorptive modulators near polarization independent condition | 1999 | |
| Improved determination of heavy hole mass in InGaAs quantum wells | 1999 | |
| Interdifusion studies in InGaAs/InP multiple quantum wells by low angle X-ray reflection, X-ray diffraction and photoluminescence | 1999 | |
| On the optimization of the InGaAs/InAlAs quantum well structures for electro-absortion modulators | 1998 | |
| Measurement of heavy and light hole masses in InGaAs/InAlAs Quantum Wells | 1997 | |
| Photoluminescence and mobility of periodically Si delta-doped InP | 1997 | |
| Single and periodically Si d-doped InP grown by LP-MOCVD | 1996 | |
| New improved technique to measure photoreflectance | 1995 | |
| Lifetime of carriers on semiconductors in the reflection mode | 1992 | |
| Tempo de vida de portadores em semicondutores através de refletância | 1992 |